• DocumentCode
    2866642
  • Title

    PSK modulator using dual-gate FETs

  • Author

    Wei Tsai ; Tung Tsai ; Paik, S. ; Carnes, I.

  • Author_Institution
    Raytheon Company, Waltham, MA, USA
  • Volume
    XXII
  • fYear
    1979
  • fDate
    14-16 Feb. 1979
  • Firstpage
    164
  • Lastpage
    165
  • Abstract
    A ∼1ns biphase modulator using dual-gate FETS will be described. The modulator has a balanced gain of 3dB in both phase states, with phase accuracy within \\pm 3.5^{\\circ} over 400MHz in X band.
  • Keywords
    Amplitude modulation; Circuits; FETs; Gallium arsenide; Insertion loss; Phase modulation; Phase shift keying; Radio frequency; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1979.1155894
  • Filename
    1155894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2866642