1700V 4H-SiC MOSFETs and Schottky diodes for next generation power conversion applications

Junction barrier Schottky (JBS) diodes and MOSFETs fabricated in 4H-SiC are described. These power devices are capable of blocking in excess of 1700 V with leakage currents of less than tens of microamps at temperatures exceeding 175°C and of conducting tens of amps in the on-state. The static on-state and blocking I-V characteristics of each component are presented, along with a comparison to comparably rated Si bipolar PiN diodes and IGBTs. The dynamic performance of the 4H-SiC diodes and MOSFETs is also presented, and a fully functional 10 kW transformer isolated DC-DC power converter operating at 1000V at a switching frequency of 20 kHz is demonstrated.