Title :
Novel CMOS compatible cavity enhanced Ge/SOI photo-detector based on secondary photoconductivity
Author :
Sahni, Subal ; Yablonovitch, Eli ; Liu, J. ; Xie, Ya-Hong
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA
Abstract :
An integrated Ge-on-SOI photo-detector based on secondary photo-conductivity is proposed and demonstrated. A 1 mW beam at 1.55 mum creates charge separation in the Ge thereby changing the resistivity of the underlying Silicon by ~3%.
Keywords :
CMOS integrated circuits; elemental semiconductors; germanium; integrated optoelectronics; photoconducting devices; photodetectors; silicon-on-insulator; CMOS compatible cavity enhanced photodetector; Ge-Si-SiO2; Silicon resistivity; charge separation; integrated Ge-on-SOI photodetector; secondary photoconductivity; Detectors; Electrons; FETs; Integrated optics; Optical films; Photoconductivity; Photodetectors; Silicon; Voltage; Wet etching; (040.5160) Photodetectors; (130.0130) Integrated Optics; (250.5300) Photonic integrated circuits;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627960
