Title :
X-band 50W silicon double drift pulsed region IMPATT diode
Author :
Nagao, Hiroya ; Hasumi, H. ; Fujine, N.
Author_Institution :
Nippon Electric Company, Ltd., Kawasaki, Japan
Abstract :
An X-band pulsed IMPATT diode for radar system use will be covered. The diode delivers 50W peak power at 10GHz with 13% efficiency with 1μs pulsewidth and 10% duty factor.
Keywords :
Diodes; Electromagnetic heating; Geometry; Heat sinks; Microwave devices; Oscillators; Power generation; Silicon; Solid state circuits; Space vector pulse width modulation;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155896
