Title :
Methods to improve gain and dark current of photon counting avalanche photo-diodes
Author :
Wu, Stewart ; Wu, Xiucheng ; Choa, Fow-Sen ; Krainak, Michael A.
Author_Institution :
Dept. of CSEE, Univ. of Maryland, Baltimore, MD
Abstract :
By controlling the voltage difference between the punch-through and breakdown voltages photon-counting APD leakage current and avalanche I-V characteristics can be improved. We fabricated different devices and demonstrated performance improvement at different temperatures.
Keywords :
III-V semiconductors; avalanche breakdown; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; leakage currents; photon counting; semiconductor device breakdown; InGaAs-InP; avalanche I-V characteristics; breakdown voltages; dark current; gain current; leakage current; photon counting avalanche photodiodes; Absorption; Breakdown voltage; Dark current; Indium gallium arsenide; Indium phosphide; Leakage current; Optical control; Optical sensors; Temperature distribution; Voltage control; (040.5160) Detector;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627962
