DocumentCode
2866696
Title
Methods to improve gain and dark current of photon counting avalanche photo-diodes
Author
Wu, Stewart ; Wu, Xiucheng ; Choa, Fow-Sen ; Krainak, Michael A.
Author_Institution
Dept. of CSEE, Univ. of Maryland, Baltimore, MD
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
By controlling the voltage difference between the punch-through and breakdown voltages photon-counting APD leakage current and avalanche I-V characteristics can be improved. We fabricated different devices and demonstrated performance improvement at different temperatures.
Keywords
III-V semiconductors; avalanche breakdown; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; leakage currents; photon counting; semiconductor device breakdown; InGaAs-InP; avalanche I-V characteristics; breakdown voltages; dark current; gain current; leakage current; photon counting avalanche photodiodes; Absorption; Breakdown voltage; Dark current; Indium gallium arsenide; Indium phosphide; Leakage current; Optical control; Optical sensors; Temperature distribution; Voltage control; (040.5160) Detector;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4627962
Filename
4627962
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