DocumentCode
2866708
Title
Effects of dilute HCl wafer cleaning solutions on borophosphosilicate glass films
Author
Webb, R. ; Glahn, R. ; Ridley, R.S.
Author_Institution
Intersil Corp., Mountaintop, PA, USA
fYear
2000
fDate
2000
Firstpage
162
Lastpage
167
Abstract
Dilute HCl mixtures are frequently used in wafer cleaning processes where removal of metal contamination is part of the overall goal of the cleaning process. Caution must be used when the processing sequence simultaneously includes steps with both dilute HCl mixtures and thin films with heavy phosphorous concentrations such as borophosphosilicate glass (BPSG). An interaction between the chlorine in the HCl containing bath and the phosphorous in the BPSG film caused the initiation of visual defects on the surface of the interlevel dielectric layer. These visual defects can be eliminated by optimizing the dilution of the HCl mixture, while maintaining effective metals and particulate removal
Keywords
borosilicate glasses; dielectric thin films; integrated circuit technology; phosphosilicate glasses; surface cleaning; B2O3-P2O5-SiO2; BPSG; HCl; borophosphosilicate glass films; dilution; interlevel dielectric layer surface; metal contamination removal; particulate removal; processing sequence; visual defects; wafer cleaning solutions; Chemical industry; Contamination; Costs; Dielectric films; Dielectric thin films; Glass; Human computer interaction; Strontium; Surface cleaning; Waste materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
0-7803-5921-6
Type
conf
DOI
10.1109/ASMC.2000.902580
Filename
902580
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