• DocumentCode
    2866708
  • Title

    Effects of dilute HCl wafer cleaning solutions on borophosphosilicate glass films

  • Author

    Webb, R. ; Glahn, R. ; Ridley, R.S.

  • Author_Institution
    Intersil Corp., Mountaintop, PA, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    162
  • Lastpage
    167
  • Abstract
    Dilute HCl mixtures are frequently used in wafer cleaning processes where removal of metal contamination is part of the overall goal of the cleaning process. Caution must be used when the processing sequence simultaneously includes steps with both dilute HCl mixtures and thin films with heavy phosphorous concentrations such as borophosphosilicate glass (BPSG). An interaction between the chlorine in the HCl containing bath and the phosphorous in the BPSG film caused the initiation of visual defects on the surface of the interlevel dielectric layer. These visual defects can be eliminated by optimizing the dilution of the HCl mixture, while maintaining effective metals and particulate removal
  • Keywords
    borosilicate glasses; dielectric thin films; integrated circuit technology; phosphosilicate glasses; surface cleaning; B2O3-P2O5-SiO2; BPSG; HCl; borophosphosilicate glass films; dilution; interlevel dielectric layer surface; metal contamination removal; particulate removal; processing sequence; visual defects; wafer cleaning solutions; Chemical industry; Contamination; Costs; Dielectric films; Dielectric thin films; Glass; Human computer interaction; Strontium; Surface cleaning; Waste materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
  • Conference_Location
    Boston, MA
  • ISSN
    1078-8743
  • Print_ISBN
    0-7803-5921-6
  • Type

    conf

  • DOI
    10.1109/ASMC.2000.902580
  • Filename
    902580