Title :
Design and reliability of mesa-etched InP-based Geiger-mode avalanche photodiodes
Author :
Smith, G.M. ; Donnelly, J.P. ; McIntosh, K.A. ; Duerr, E.K. ; Vineis, C.J. ; Shaver, D.C. ; Verghese, S. ; Funk, J.E. ; Mahan, J.M. ; Hopman, P.I. ; Mahoney, L.J. ; Molvar, K.M. ; O´Donnell, Frederick J. ; Oakley, D.C. ; Ray, K.G.
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA
Abstract :
Design modifications to InP-based Geiger-mode avalanche photodiodes are described that improve reliability. Geiger-mode aging at multiple conditions can cause significant degradation in some design variants while linear mode (below breakdown) aging does not.
Keywords :
II-VI semiconductors; avalanche photodiodes; indium compounds; Geiger-mode aging; InP; linear mode aging; mesa-etched Geiger-mode avalanche photodiodes; Aging; Avalanche photodiodes; Breakdown voltage; Degradation; Electric breakdown; Indium phosphide; Laser radar; Optical pulses; Passivation; Plasma temperature; (040.3780) Low light level; (060.4510) Optical communications; (230.5170) Photodiodes; (280.3640) Lidar;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627964
