DocumentCode :
2866883
Title :
Capacitor energy variation based designer-side switching losses analysis for integrated synchronous Buck converters in CMOS technology
Author :
Wang, Xiaopeng ; Huang, Alex Q.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear :
2011
fDate :
6-11 March 2011
Firstpage :
1130
Lastpage :
1137
Abstract :
This paper introduces a designer-side switching loss analysis characterized by evaluating parasitic capacitor´s energy variation and related losses for integrated synchronous Buck converters in CMOS technology (ISBC). After categorizing losses related to power FET parasitic capacitors´ charging/discharging currents as charging/discharging losses (C_loss), it is noticed that the ratio of charging/discharging losses over capacitor´s energy variation (ROCL) presents two extreme values; one of which is almost 100% and the other one is ignorable. Also, the same capacitor might encounter different ROCL when switching event is different. Five typical kinds of charging/discharging circuits are further classified in terms of ROCL. In order to evaluate parasitic capacitor´s energy variation in a complete switching event, a hypothesis equation is adopted to cope with the variation of capacitance because of the operation mode shift of the power FET. At the same time, a process is introduced about how to verify the hypothesis and extract the unit width variables involved in the energy variation evaluation. The proposed switching losses analysis can provide losses breakdown in terms of semiconductor process technology data. At the same time, the analysis overcomes limitations in previous methods and supports the switching losses analysis for those advanced ISBC utilizing power stage width segmentation technology for the sake of wide load range efficiency. Transistor level simulation in Cadence environment verifies the analysis.
Keywords :
CMOS integrated circuits; DC-DC power convertors; capacitors; power field effect transistors; switching convertors; CMOS technology; ISBC; charging-discharging currents; charging-discharging losses; designer-side switching losses analysis; hypothesis equation; integrated synchronous DC-DC buck converters; losses breakdown; parasitic capacitor energy variation evaluation; power FET parasitic capacitor; power stage width segmentation technology; semiconductor process technology data; transistor level simulation; Capacitors; Equations; Load modeling; Mathematical model; Semiconductor process modeling; Switches; Switching loss;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
ISSN :
1048-2334
Print_ISBN :
978-1-4244-8084-5
Type :
conf
DOI :
10.1109/APEC.2011.5744736
Filename :
5744736
Link To Document :
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