Title :
Submicron channel MOS-IC technology
Author :
Yamaguchi, Toru ; Lust, M. ; Ragsdare, S. ; Sato, Seiki
Author_Institution :
Tektronix, Inc., Beaverton, OR, USA
Abstract :
The development of a submicron channel length MOS IC with a channel length of 0.3 to 0.9μm will be reported. Typical delay time per gate was in the range of subnanosecond to 2ns and power dissipation per gate was 0.3- 0.7mW.
Keywords :
Boron; Integrated circuit technology; Ion implantation; Oxidation; Power dissipation; Ring oscillators; Semiconductor films; Silicon; Substrates; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155911
