Title :
A 20Gb/s Burst-Mode CDR Circuit Using Injection-Locking Technique
Author :
Lee, Jri ; Liu, Mingchung
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
The design and experimental verification of a 20Gb/s CDR circuit based on injection-locking technique is presented. Fabricated in 90nm CMOS technology, this circuit achieves a BER of <10-9 for both continuous and burst modes. It has tunability of over 800Mb/s while consuming 175mW. The re-acquisition time of this CDR is 1b interval.
Keywords :
CMOS integrated circuits; error statistics; synchronisation; 175 mW; 20 Gbit/s; 90 nm; CMOS technology; bit error rate; clock recovery; data recovery; injection locking; CMOS technology; Circuits; Clocks; Filters; Frequency; Inductors; Jitter; Phase locked loops; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0853-9
Electronic_ISBN :
0193-6530
DOI :
10.1109/ISSCC.2007.373580
