DocumentCode
2867260
Title
Robustness of RF MEMS capacitive switches in Harsh Environments
Author
Goldsmith, C.L. ; Hwang, J.C.M. ; Gudeman, C. ; Auciello, O. ; Ebel, J.L. ; Newman, H.S.
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
RF MEMS switches have evolved significantly since the early days of testing unpackaged devices in an uncontrolled environment with failure modes that could only be guessed at. Today, MEMS switch technology has effective, RF-friendly wafer-level packaging, demonstrated temperature robustness, and failure modes that can be characterized and modeled from accelerated testing. This presentation overviews the advances in packaging, reliability, and environmental robustness for RF MEMS switches made on DARPA´s HERMIT program. It also includes more recent developments in novel nanostructured switch dielectrics, CMOS co-integration, intelligent CMOS control, and operation of RF MEMS in adverse thermal and radiation environments.
Keywords
Atmospheric modeling; Micromechanical devices; Radio frequency; Robustness; Switches; Temperature measurement; CMOS; RF MEMS; environmental robustness; microwave switch; reliability; ultrananocrystalline diamond;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259627
Filename
6259627
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