DocumentCode
2867290
Title
Optimization of MOS capacitor based short flow for monitoring ion implantation-induced charging
Author
Brozek, Tomasz ; Norton, Cory
Author_Institution
Motorola Inc., Chandler, AZ, USA
fYear
2000
fDate
2000
Firstpage
387
Lastpage
391
Abstract
Application of MOS antenna capacitors for charging assessment is a widely recognized approach among both process engineers and tool manufacturers. This paper presents results of optimizing methodology to monitor charging caused by ion beams using on wafer MOS capacitors. Main factors considered during the optimization process include simplicity, testability, and sensitivity. Short flow manufacturing of monitor wafers was developed to support “stick-and-test” approach
Keywords
MOS capacitors; ion implantation; process monitoring; surface charging; MOS capacitor; antenna effect; ion implantation; optimization; oxide degradation; process monitoring; short flow manufacturing; stick-and-test method; wafer charging; Degradation; Electric breakdown; Electron beams; Ion beams; Ion implantation; MOS capacitors; Monitoring; Optimization methods; Surface charging; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
0-7803-5921-6
Type
conf
DOI
10.1109/ASMC.2000.902616
Filename
902616
Link To Document