Title :
Ultra compact, low thermal impedance and high reliability module structure with SiC Schottky Barrier Diodes
Author :
Ikeda, Yoshinari ; Nashida, Norihiro ; Horio, Masafumi ; Takubo, Hiromu ; Takahashi, Yoshikazu
Author_Institution :
Res. Center, Fuji Electr. Holdings Co., Ltd., Matsumoto, Japan
Abstract :
An advanced module structure for taking advantage of superior characteristics of Silicon Carbide (SiC) device was researched and developed. This structure can realize about four times of power rating density and one half of thermal impedance compared to that of conventional structure. Also, this structure achieved to have higher reliability by applying epoxy molding structure and copper pin connection to conduct current to/from power chips instead of aluminum bonding wire.
Keywords :
Schottky barriers; Schottky diodes; moulding; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC; SiC Schottky barrier diodes; copper pin connection; epoxy molding structure; power chips; power rating density; reliability module structure; silicon carbide device; ultra compact low thermal impedance; Aluminum; Copper; Impedance; Packaging; Schottky diodes; Silicon carbide; Substrates;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
Print_ISBN :
978-1-4244-8084-5
DOI :
10.1109/APEC.2011.5744760
