• DocumentCode
    2867341
  • Title

    Interconnect strategies for deep submicron CMOS manufacture

  • Author

    Mark, Christopher ; Rose, Kenneth

  • Author_Institution
    Center for Adv. Interconnect Sci. & Technol., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    413
  • Lastpage
    418
  • Abstract
    As CMOS chips are scaled to deep submicron dimensions, interconnect strategy remains a key gateway for performance and manufacturability. ITRS´99 projections seriously underestimate the number of wiring levels required, even though inductance effects can significantly reduce wiring level requirements. By examining the requirements for a Multimedia Internet Processor, we project more reasonable wiring level requirements. The effects of alternative interconnect materials are considered, and the importance of appropriate interconnect strategies is emphasized
  • Keywords
    CMOS integrated circuits; integrated circuit interconnections; BEOL manufacturing; ITRS´99; Multimedia Internet Processor; deep submicron CMOS chip; inductance; interconnect material; wiring level; Chip scale packaging; Clocks; Conducting materials; Frequency estimation; Guidelines; Inductance; Internet; Logic; Manufacturing processes; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
  • Conference_Location
    Boston, MA
  • ISSN
    1078-8743
  • Print_ISBN
    0-7803-5921-6
  • Type

    conf

  • DOI
    10.1109/ASMC.2000.902620
  • Filename
    902620