DocumentCode
2867341
Title
Interconnect strategies for deep submicron CMOS manufacture
Author
Mark, Christopher ; Rose, Kenneth
Author_Institution
Center for Adv. Interconnect Sci. & Technol., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2000
fDate
2000
Firstpage
413
Lastpage
418
Abstract
As CMOS chips are scaled to deep submicron dimensions, interconnect strategy remains a key gateway for performance and manufacturability. ITRS´99 projections seriously underestimate the number of wiring levels required, even though inductance effects can significantly reduce wiring level requirements. By examining the requirements for a Multimedia Internet Processor, we project more reasonable wiring level requirements. The effects of alternative interconnect materials are considered, and the importance of appropriate interconnect strategies is emphasized
Keywords
CMOS integrated circuits; integrated circuit interconnections; BEOL manufacturing; ITRS´99; Multimedia Internet Processor; deep submicron CMOS chip; inductance; interconnect material; wiring level; Chip scale packaging; Clocks; Conducting materials; Frequency estimation; Guidelines; Inductance; Internet; Logic; Manufacturing processes; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
0-7803-5921-6
Type
conf
DOI
10.1109/ASMC.2000.902620
Filename
902620
Link To Document