DocumentCode
2867345
Title
Process simulation for device design and control
Author
Dutton, R. ; Antoniadis, D.
Author_Institution
Stanford University, Stanford, CA, USA
Volume
XXII
fYear
1979
fDate
14-16 Feb. 1979
Firstpage
244
Lastpage
245
Abstract
The key features of IC process simulation will be discussed for MOS and bipolar technologies. Device simulation based on processing-modeling reveal critical control factors for a phosphorus emitter bipolar process and two scaled down MOS device structures.
Keywords
Boron; Circuit analysis computing; Circuit simulation; Fabrication; Impurities; Integrated circuit modeling; Laboratories; Oxidation; Semiconductor process modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1979.1155937
Filename
1155937
Link To Document