Title :
Process simulation for device design and control
Author :
Dutton, R. ; Antoniadis, D.
Author_Institution :
Stanford University, Stanford, CA, USA
Abstract :
The key features of IC process simulation will be discussed for MOS and bipolar technologies. Device simulation based on processing-modeling reveal critical control factors for a phosphorus emitter bipolar process and two scaled down MOS device structures.
Keywords :
Boron; Circuit analysis computing; Circuit simulation; Fabrication; Impurities; Integrated circuit modeling; Laboratories; Oxidation; Semiconductor process modeling; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155937
