DocumentCode :
2867358
Title :
Injection locking of 1320 nm quantum-dot lasers
Author :
Goulding, David ; Hegarty, Stephen P. ; Melnik, Sergey ; Hartnett, Mark ; McInerney, John G. ; Huyet, Guillaume
Author_Institution :
Dept. of Phys., Univ. Coll. Cork, Cork
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
We explore the optical injection locking dynamics of InGaAs quantum-dot lasers at 1320 nm and experimentally demonstrate bi-stability as well as multi-pulse excitability. The experimental results are well reproduced by rate-equation modelling.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser stability; laser theory; optical bistability; quantum dot lasers; semiconductor device models; multipulse excitability; optical bistability; optical injection locking dynamics; quantum-dot lasers; rate-equation modelling; wavelength 1320 nm; Injection-locked oscillators; Laser modes; Laser noise; Laser theory; Optical bistability; Optical distortion; Optical feedback; Quantum dot lasers; Quantum well lasers; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628000
Filename :
4628000
Link To Document :
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