Title :
Low-driving-current 10-Gb/s direct modulation of temperature-stable 1.3-μm p-doped quantum-dot lasers between 20°C and 90°C
Author :
Ishida, M. ; Hatori, N. ; Otsubo, K. ; Yamamoto, T. ; Nakata, Y. ; Ebe, H. ; Sugawara, M. ; Arakawa, Y.
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo
Abstract :
Low-driving-current temperature-stable 10-Gb/s operation was realized at fixed modulation-current of 25.2-mAp-p and fixed bias-current of 23.4-mA between 20degC and 90degC in 1.3-mum p-doped quantum-dot lasers with optimized cavity structure.
Keywords :
optical modulation; quantum dot lasers; bit rate 10 Gbit/s; current 23.4 mA; direct modulation; quantum-dot lasers; temperature 20 C to 90 C; wavelength 1.3 mum; Bandwidth; Laser modes; Laser theory; Modulation coding; Optical design; Optical modulation; Quantum dot lasers; Quantum well lasers; Reflectivity; Temperature dependence; (140, 2020) Diode lasers; (230, 5590) Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628002
