Title :
Submicron thermal imaging of quantum dot lasers on GaAs and Si substrates
Author :
Chan, P.K.L. ; Pipe, K.P. ; Mi, Z. ; Yang, J. ; Bhattacharya, P.
Author_Institution :
Solid State Thermal Phys. Lab., Univ. of Michigan, Ann Arbor, MI
Abstract :
We map a laserpsilas internal temperature structure for the first time, identifying separate heat sources due to contact heating and nonradiative recombination and using this technique to compare degradation mechanisms for GaAs-based and Si-based lasers.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; infrared imaging; quantum dot lasers; silicon; GaAs; GaAs-based lasers; Si; Si-based lasers; contact heating; heat sources; laser internal temperature structure; nonradiative recombination; quantum dot lasers; silicon substrates; submicron thermal imaging; Gallium arsenide; Heat transfer; Heating; Optical imaging; Quantum dot lasers; Semiconductor lasers; Solid lasers; Substrates; Temperature dependence; Thermal degradation; (120.6780) Temperature; (140.5960) Semiconductor Lasers; (140.6810) Thermal Effects;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628004
