• DocumentCode
    2867428
  • Title

    Submicron thermal imaging of quantum dot lasers on GaAs and Si substrates

  • Author

    Chan, P.K.L. ; Pipe, K.P. ; Mi, Z. ; Yang, J. ; Bhattacharya, P.

  • Author_Institution
    Solid State Thermal Phys. Lab., Univ. of Michigan, Ann Arbor, MI
  • fYear
    2006
  • fDate
    21-26 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We map a laserpsilas internal temperature structure for the first time, identifying separate heat sources due to contact heating and nonradiative recombination and using this technique to compare degradation mechanisms for GaAs-based and Si-based lasers.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; infrared imaging; quantum dot lasers; silicon; GaAs; GaAs-based lasers; Si; Si-based lasers; contact heating; heat sources; laser internal temperature structure; nonradiative recombination; quantum dot lasers; silicon substrates; submicron thermal imaging; Gallium arsenide; Heat transfer; Heating; Optical imaging; Quantum dot lasers; Semiconductor lasers; Solid lasers; Substrates; Temperature dependence; Thermal degradation; (120.6780) Temperature; (140.5960) Semiconductor Lasers; (140.6810) Thermal Effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    978-1-55752-813-1
  • Electronic_ISBN
    978-1-55752-813-1
  • Type

    conf

  • DOI
    10.1109/CLEO.2006.4628004
  • Filename
    4628004
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2867428