• DocumentCode
    2867442
  • Title

    16K CMOS/SOS asynchronous static RAM

  • Author

    Stewart, R. ; Dingwall, A.

  • Author_Institution
    RCA Laboratories, Somerville, NJ
  • Volume
    XXII
  • fYear
    1979
  • fDate
    14-16 Feb. 1979
  • Firstpage
    104
  • Lastpage
    105
  • Abstract
    A CMOS/SOS buried contact process allowing fabrication of dense static memory cells will be described. The technology has been applied to a 16K 5μ polysilicongate RAM with 1150\\mu ^{2} (1.78 mil2) cells.
  • Keywords
    CMOS technology; Epitaxial layers; Laboratories; Logic devices; Power supplies; Random access memory; Read-write memory; Solid state circuits; Voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1979.1155941
  • Filename
    1155941
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2867442