DocumentCode :
2867442
Title :
16K CMOS/SOS asynchronous static RAM
Author :
Stewart, R. ; Dingwall, A.
Author_Institution :
RCA Laboratories, Somerville, NJ
Volume :
XXII
fYear :
1979
fDate :
14-16 Feb. 1979
Firstpage :
104
Lastpage :
105
Abstract :
A CMOS/SOS buried contact process allowing fabrication of dense static memory cells will be described. The technology has been applied to a 16K 5μ polysilicongate RAM with 
(1.78 mil2) cells.
(1.78 mil2) cells.Keywords :
CMOS technology; Epitaxial layers; Laboratories; Logic devices; Power supplies; Random access memory; Read-write memory; Solid state circuits; Voltage; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1979.1155941
Filename :
1155941
Link To Document :
