Title :
Shunt RF MEMS contact switch based on PZT-on-SOI technology
Author :
Ivanov, Tony G. ; Pulskamp, Jeffrey S. ; Polcawich, Ronald G. ; Proie, Robert M.
Author_Institution :
US Army Research Laboratory, Adelphi, MD 29783-1197, USA
Abstract :
This paper presents a novel RF MEMS contact switch based on PZT-on-SOI technology. PZT transducers provide 0.7 mN contact force at 16V bias voltage. Single crystal Si actuators, formed from the SOI device layer, ensure 0.7 mN restoring force. The switch has −0.1 dB insertion loss, −29.0 dB return loss and −27.4 dB isolation at 2 GHz. Unpackaged devices were tested in a single-cycle-resolution reliability test system and demonstrated lifetime of 100 million cycles.
Keywords :
Coplanar waveguides; Detectors; Films; Micromechanical devices; Radio frequency; Switches; Transducers; Microelectromechanical systems;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259656
