DocumentCode
2867807
Title
A 58.4mW solid-state power amplifier at 220 GHz using InP HBTs
Author
Reed, Thomas B. ; Rodwell, Mark J.W. ; Griffith, Zach ; Rowell, Petra ; Field, Mark ; Urteaga, Miguel
Author_Institution
Department of Electrical and Computer Engineering, University of California, Santa Barbara, USA 93106
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
A 220 GHz solid state power amplifier MMIC is presented demonstrating 58.4 mW of output power with 5.4dB compressed gain. The 8-cell amplifier has a small signal gain of 8.9 dB at 220 GHz, and 3-dB bandwidth from 206 to 242GHz. Amplifier cells are formed using a 250nm InP HBT technology and a 5um BCB thin-film, non-inverted microstrip wiring environment. Power division and combining of the eight amplifier cells is done by a 2-1 quarter wave combiner series connected to a 4-1 Dolph-Chebyshev combiner. More than 50mW of output power was observed from 215 to 225GHz.
Keywords
Bandwidth; Gain; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; Power amplifiers; Power generation; Power amplifier; Solid State Power Amplifier (SSPA);
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259659
Filename
6259659
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