• DocumentCode
    2867884
  • Title

    Lithography for VLSI

  • Author

    Joy, R.

  • Author_Institution
    IBM Corp., Hopwell Junction, NY, USA
  • Volume
    XXII
  • fYear
    1979
  • fDate
    14-16 Feb. 1979
  • Firstpage
    211
  • Lastpage
    211
  • Abstract
    VLSI technology will be limited by the lithographic capability available for pattern definition. There are several exposure techniques presently being considered and panelists will attempt to determine which options are most likely to be used. Three basic areas will be surveyed: will optical exposure be sufficient for 1 micrometer lithography or will it be necessary to use electron beam or x-ray systems; if optical systems are used, what is the limit on the optical capability; and if and when electron or x-ray systems are used, will they be economical for high volume parts.
  • Keywords
    Computed tomography; Costs; Electron beams; Electron optics; Manufacturing; Optical beams; Semiconductor device manufacture; Throughput; Very large scale integration; X-ray lithography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1979.1155967
  • Filename
    1155967