DocumentCode
2867884
Title
Lithography for VLSI
Author
Joy, R.
Author_Institution
IBM Corp., Hopwell Junction, NY, USA
Volume
XXII
fYear
1979
fDate
14-16 Feb. 1979
Firstpage
211
Lastpage
211
Abstract
VLSI technology will be limited by the lithographic capability available for pattern definition. There are several exposure techniques presently being considered and panelists will attempt to determine which options are most likely to be used. Three basic areas will be surveyed: will optical exposure be sufficient for 1 micrometer lithography or will it be necessary to use electron beam or x-ray systems; if optical systems are used, what is the limit on the optical capability; and if and when electron or x-ray systems are used, will they be economical for high volume parts.
Keywords
Computed tomography; Costs; Electron beams; Electron optics; Manufacturing; Optical beams; Semiconductor device manufacture; Throughput; Very large scale integration; X-ray lithography;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1979.1155967
Filename
1155967
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