DocumentCode
2867913
Title
Microwave and high-speed GaAs technology
Author
Cheng Wen
Author_Institution
Rockwell International, Anaheim, CA, USA
Volume
XXII
fYear
1979
fDate
14-16 Feb. 1979
Firstpage
212
Lastpage
212
Abstract
Technology aspects that will be covered in this increasingly expanding area include GaAs materials, power FETs, high frequency FETs, microwave amplifier circuits, monolithic RF circuits, and monolithic digital signal processing circuits. The present status and future directions of the technology will also be discussed.
Keywords
Aerospace electronics; Gallium arsenide; Instruments; Laboratories; Microwave circuits; Microwave communication; Microwave devices; Microwave technology; Microwave theory and techniques; Radar;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1979.1155968
Filename
1155968
Link To Document