Title :
Low noise X-band 0.5 µm GaAs FET amplifiers
Author :
Chiang-Liang Huang ; Mason, Stephen ; Wong, Rita ; Nevin, L. ; Barrera, Jorge
Author_Institution :
Hewlett-Packard Company, San Jose, CA, USA
Abstract :
This paper will discuss a 0.5μm GaAs FET and 9-10GHz low noise amplifier. Devices with 1.9dB noise figure and 9.5dB associated gain at 10GHz were used to construct two-stage amplifiers with 2.3dB midband noise figure and 17.8dB gain.
Keywords :
FETs; Frequency; Gallium arsenide; Impedance matching; Low-noise amplifiers; Noise figure; Noise reduction; Passband; Size control; Temperature;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155975
