مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

2868207

Title :

A 64Kb VMOS RAM

Author :

Essl, D. ; Losehand, R. ; Rehn, B.

Author_Institution :

Siemens AG, Munich, Germany

Volume :

XXII

fYear :

1979

fDate :

14-16 Feb. 1979

Firstpage :

148

Lastpage :

149

Abstract :

This paper will cover a 64Kb dynamic RAM built with VMOS technology, featuring a folded bit line/sense amplifier configuration.

Keywords :

Clamps; Crosstalk; DRAM chips; Electrons; Latches; Low-noise amplifiers; Microwave integrated circuits; Switches; Threshold voltage; Writing;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International

Conference_Location :

Philadelphia, PA, USA

Type :

conf

DOI :

10.1109/ISSCC.1979.1155987

Filename :

1155987

Link To Document :