A 64Kb VMOS RAM

Author

Essl, D. ; Losehand, R. ; Rehn, B.

Author_Institution

Siemens AG, Munich, Germany

Volume

XXII

fYear

1979

fDate

14-16 Feb. 1979

Firstpage

148

Lastpage

149

Abstract

This paper will cover a 64Kb dynamic RAM built with VMOS technology, featuring a folded bit line/sense amplifier configuration.

Keywords

Clamps; Crosstalk; DRAM chips; Electrons; Latches; Low-noise amplifiers; Microwave integrated circuits; Switches; Threshold voltage; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

DOI

10.1109/ISSCC.1979.1155987

Filename

1155987

Link To Document