Title :
A 64Kb MOS dynamic RAM
Author :
Ilbok Lee ; Yu, Rong ; Smith, Fernanda ; Wong, Simon ; Embrathiry, M.
Author_Institution :
National Semiconductor Corp., Santa Clara, CA, USA
Abstract :
A memory cell using a three-layer polysilicon process will be reported. Described, too, will be a dummy cell and sense amplifier configuration.
Keywords :
Clocks; Contacts; DRAM chips; Decoding; Dielectrics; MOS capacitors; Random access memory; Substrates; Switches; Turning;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155988
