DocumentCode
2868260
Title
Full W-band power amplifier/combiner utilizing GaAs technology
Author
Kim, Bumjin ; Tran, Alex ; Schellenberg, James
Author_Institution
QuinStar Technology Inc., Torrance, CA, 90505, USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
This paper reports the first full-band, W-band (75–110 GHz) power amplifier utilizing GaAs MMICs. The MMIC, developed using a commercially available 0.1µm GaAs pHEMT process, demonstrated a small-signal gain of greater than 15 dB with a typical Psat of 14 dBm across W-band. Four of these MMICs were combined using a low-loss, 4-way septum combiner to produce an output power of 19 dBm ±1 dB across the 75 to 110 GHz band.
Keywords
Gallium arsenide; Indium phosphide; Loss measurement; MMICs; PHEMTs; Power amplifiers; Power generation; GaAs; W-band; millimeter-wave integrated circuits (MMIC); power amplifier; septum combiner; solid-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259686
Filename
6259686
Link To Document