Title :
A mm-Wave CMOS Heterodyne Receiver with On-Chip LO and Divider
Author_Institution :
California Univ., Los Angeles, CA
Abstract :
A heterodyne RX incorporates an LNA, RF and I/Q IF mixers, nested inductors, and a passive-mixer-based Miller divider. Fabricated in a 90nm CMOS process, the RX achieves an NF of 6.9 to 8.3dB from 49 to 53GHz with a gain of 26 to 31.5dB and an I/Q mismatch of 1.6dB/6.5deg. The circuit consumes 80mW from a 1.8V supply
Keywords :
CMOS integrated circuits; millimetre wave receivers; 1.8 V; 26 to 31.5 dB; 49 to 53 GHz; 6.9 to 8.3 dB; 80 mW; 90 nm; CMOS process; I/Q IF mixers; LNA; mm-wave CMOS heterodyne receiver; nested inductors; on-chip LO; passive-mixer-based Miller divider; Capacitance; Circuits; Degradation; Inductors; Noise measurement; Oscillators; Prototypes; Radio frequency; Transceivers; Transconductance;
Conference_Titel :
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0853-9
Electronic_ISBN :
0193-6530
DOI :
10.1109/ISSCC.2007.373357
