DocumentCode
2868272
Title
Design and characterization of a SiGe RFICs for millimeter-wave radiometers
Author
May, J.W. ; Uzunko, M. ; Rebeiz, G.M.
Author_Institution
HRL Laboratories LLC, Malibu, CA 90265, USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
This paper presents the design and characterization of SiGe RFICs for millimeter-wave radiometers. It is seen that SiGe technology results in high gain millimeter-wave amplifiers, high responsivity detectors and low overall 1/f noise, making it ideal for on-chip radiometers. Two example radiometer systems, one at W-band and one at D-band, are presented in detail.
Keywords
CMOS integrated circuits; Detectors; Noise; Radiometers; Silicon germanium; Switches; Switching circuits; Imaging Systems; Radiometers; SiGe;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259687
Filename
6259687
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