Title :
A 400mW 11-18GHz GaAs MESFET amplifier using planar power combining techniques
Author_Institution :
Watkins-Johnson Co., Palo Alto, CA, USA
Keywords :
Assembly; Frequency conversion; Gallium arsenide; MESFETs; Power amplifiers; Power dividers; Solid state circuits;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155991
