DocumentCode

2868309

Title

A 400mW 11-18GHz GaAs MESFET amplifier using planar power combining techniques

Author

Niclas, K.

Author_Institution

Watkins-Johnson Co., Palo Alto, CA, USA

Volume

XXII

fYear

1979

fDate

14-16 Feb. 1979

Firstpage

122

Lastpage

123

Keywords

Assembly; Frequency conversion; Gallium arsenide; MESFETs; Power amplifiers; Power dividers; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1979.1155991

Filename

1155991