DocumentCode :
2868325
Title :
Low-Power mm-Wave Components up to 104GHz in 90nm CMOS
Author :
Heydari, Babak ; Bohsali, Mounir ; Adabi, Ehsan ; Niknejad, Ali M.
Author_Institution :
California Univ., Berkeley, CA
fYear :
2007
fDate :
11-15 Feb. 2007
Firstpage :
200
Lastpage :
597
Abstract :
A customized 90nm device layout yields an extrapolated fmax of 300GHz. The device is incorporated into a low-power 60GHz amplifier consuming 10.5mW, providing 12dB of gain, and an output P1dB of 4dBm. An experimental 3-stage 104GHz amplifier has a measured peak gain of 9.3dB. Finally, a Colpitts oscillator at 104GHz delivers up to -5dBm of output power while consuming 6mW.
Keywords :
low-power electronics; millimetre wave amplifiers; 10.5 mW; 104 GHz; 12 dB; 300 GHz; 6 mW; 60 GHz; 9.3 dB; 90 nm; low-power amplifier; low-power mm-wave components; CMOS technology; Capacitors; Extraterrestrial measurements; Frequency; Inductors; Oscillators; Phase noise; Power generation; Power measurement; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
1-4244-0853-9
Electronic_ISBN :
0193-6530
Type :
conf
DOI :
10.1109/ISSCC.2007.373363
Filename :
4242334
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2868325
بازگشت