DocumentCode

2868367

Title

Vertical charge-coupled devices

Author

Mohsen, A.

Author_Institution

Intel Corp., Santa Clara, CA, USA

Volume

XXII

fYear

1979

fDate

14-16 Feb. 1979

Firstpage

152

Lastpage

153

Keywords

Charge transfer; Doping profiles; Electrodes; Electrons; MOS capacitors; Potential energy; Potential well; Topology; Voltage; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1979.1155995

Filename

1155995