Title :
Vertical charge-coupled devices
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Keywords :
Charge transfer; Doping profiles; Electrodes; Electrons; MOS capacitors; Potential energy; Potential well; Topology; Voltage; Writing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155995
