DocumentCode :
2868425
Title :
Large signal performance of ferroelectric FBARs
Author :
Lee, Seungku ; Seungku Lee ; Sis, Seyit Ahmet ; Mortazawi, Amir
Author_Institution :
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 48109, USA
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
Ferroelectric thin film bulk acoustic wave resonators (FBARs) have been of growing interest due to their electric field dependent properties. Resonators based on the ferroelectric barium strontium titanate (BaxSr(1−x)TiO3, BST) are intrinsically switchable, namely they have resonances that switch on with the application of a dc bias voltage. In this paper, the large signal performance and nonlinear behavior of BST FBARs are investigated. Measurement results show as the dc bias voltage increases, the nonlinear behavior due to high RF input power decreases. For better understanding, measurement results of BST FBARs are fitted to a nonlinear modified Butterworth-Van Dyke (MBVD) model with respect to dc bias voltage and RF input power.
Keywords :
Electric fields; Film bulk acoustic resonators; Integrated circuit modeling; Microwave circuits; Power measurement; Radio frequency; Voltage measurement; Ferroelectric devices; film bulk acoustic resonators; nonlinear systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259695
Filename :
6259695
Link To Document :
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