Title :
A 80ns 5V-only dynamic RAM
Author :
Lee, Jeyull ; Breivogel, J. ; Kunita, R. ; Webb, C.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
The design and technology of a +5V-only 16K dynamic RAM with a typical access time of 80ns will be described. Power dissipation is 16.5mW standby and 140mW active.
Keywords :
Circuit testing; Clocks; Current supplies; DRAM chips; Decoding; Impact ionization; Leakage current; Optical wavelength conversion; Power generation; Production;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155999
