DocumentCode :
2868535
Title :
Digital Class E Power Amplifier for The RF Band
Author :
Abu-Nimeh, Faisal T. ; Salem, Fathi M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI
fYear :
2006
fDate :
25-28 June 2006
Firstpage :
1548
Lastpage :
1552
Abstract :
The paper describes a digital approach to adjust (in controlled fashion) the output power of an RF circuit using 0.5 mum digital CMOS technology. This circuit would serve as power driver that minimizes the wasted power and maximizes the delivered power to the load. The power amplifier consists of an array of parallel NMOS transistors connected to an (all-onchip) modified class E power amplifier. The overall circuit functions as a direct digital to RF filtered amplitude converter. The results show that the maximum output power achieved is 8 dBm using a 3V power supply and occupying 0.18mum2
Keywords :
CMOS integrated circuits; power amplifiers; radiofrequency amplifiers; 3 V; RF band; RF circuit; RF filtered amplitude converter; digital CMOS technology; power amplifier; CMOS digital integrated circuits; CMOS technology; Digital filters; Driver circuits; MOSFETs; Paper technology; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mechatronics and Automation, Proceedings of the 2006 IEEE International Conference on
Conference_Location :
Luoyang, Henan
Print_ISBN :
1-4244-0465-7
Electronic_ISBN :
1-4244-0466-5
Type :
conf
DOI :
10.1109/ICMA.2006.257405
Filename :
4026320
Link To Document :
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