DocumentCode
2868535
Title
Digital Class E Power Amplifier for The RF Band
Author
Abu-Nimeh, Faisal T. ; Salem, Fathi M.
Author_Institution
Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI
fYear
2006
fDate
25-28 June 2006
Firstpage
1548
Lastpage
1552
Abstract
The paper describes a digital approach to adjust (in controlled fashion) the output power of an RF circuit using 0.5 mum digital CMOS technology. This circuit would serve as power driver that minimizes the wasted power and maximizes the delivered power to the load. The power amplifier consists of an array of parallel NMOS transistors connected to an (all-onchip) modified class E power amplifier. The overall circuit functions as a direct digital to RF filtered amplitude converter. The results show that the maximum output power achieved is 8 dBm using a 3V power supply and occupying 0.18mum2
Keywords
CMOS integrated circuits; power amplifiers; radiofrequency amplifiers; 3 V; RF band; RF circuit; RF filtered amplitude converter; digital CMOS technology; power amplifier; CMOS digital integrated circuits; CMOS technology; Digital filters; Driver circuits; MOSFETs; Paper technology; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Mechatronics and Automation, Proceedings of the 2006 IEEE International Conference on
Conference_Location
Luoyang, Henan
Print_ISBN
1-4244-0465-7
Electronic_ISBN
1-4244-0466-5
Type
conf
DOI
10.1109/ICMA.2006.257405
Filename
4026320
Link To Document