Title :
A 65mW 128K EB-ROM
Author :
Kiuchi, Kentaro ; Ieda, N. ; Takeya, K. ; Baba, Toshihiko
Author_Institution :
NTT Musashino Electrical Communication Lab., Tokyo, Japan
Abstract :
A high density 128K EB-ROM using direct electron-beam data writing and processes to provide 2μm patterns will be presented. The completed ROM has 200ns access time and 65mW power dissipation.
Keywords :
Capacitance; Clocks; Decoding; Inverters; Power dissipation; Read only memory; Solid state circuits; Transistors; Voltage; Writing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1156009
