Title :
Characterization of a 400-GHz SiGe HBT technology for low-power D-Band transceiver applications
Author :
Balteanu, A. ; Sarkas, I. ; Adinolfi, V. ; Dacquay, E. ; Tomkins, A. ; Celi, D. ; Chevalier, P. ; Voinigescu, S.P.
Author_Institution :
University of Toronto, Canada
Abstract :
This paper describes a methodology for extracting the HICUM/L0 model of a 400-GHz SiGe HBT in the presence of strong self-heating. Good agreement is observed between measurements and simulations for DC characteristics, fT, fMAX, and Y parameters in a wide range of frequencies (DC to 170 GHz) and bias conditions. The low power capability of this process is demonstrated in a fundamental frequency 139–150 GHz VCO+16∶1 prescaler consuming less than 99 mW when operated from a 1.5V supply.
Keywords :
Calibration; Frequency measurement; Heterojunction bipolar transistors; Integrated circuit modeling; Scattering parameters; Semiconductor device measurement; Silicon germanium; D-Band; HICUM; Semiconductor device modeling; heterojunction bipolar transistors; prescaler; silicon-germanium; voltage-controlled oscillator;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259705
