DocumentCode
2868617
Title
Extending resolution limits of IC fabrication technology: demonstration by device fabrication and circuit performance
Author
Nalamasu, Omkaram ; Watson, George Patrick ; Cirelli, Raymond A. ; Bude, Jeff ; Kizilyalli, Isik C. ; Kohler, R.
Author_Institution
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
fYear
2001
fDate
2001
Firstpage
469
Abstract
Summary form only given, as follows. To continue the trend of increased functionality in IC devices at a reduced cost, it is imperative that robust new fabrication technologies be invented, innovated and implemented for reducing device features. As device dimensions shrink, new materials and technologies are developed, and methods have been invented to extend the resolution capability of the existing tool infrastructure. This talk will give an overview of challenges in IC fabrication and specifically illustrate how these challenges have been successfully met using lithography and gate etch as examples. Using existing optical lithography and etch tools, a fully functional 2.7 million transistor DSP with 120 nm gates has been fabricated. Additionally, a nonvolatile memory device of 60 nm gate dimensions has also been fabricated with further refinements in process and using advanced lithographic techniques. These results and future trends will be detailed
Keywords
VLSI; etching; integrated circuit technology; photolithography; 120 nm; 60 nm; DSP; IC fabrication technology; circuit performance; device features; gate etch; nonvolatile memory device; optical lithography; resolution limits; tool infrastructure; Cost function; Digital signal processing; Etching; Lithography; Nonvolatile memory; Optical device fabrication; Optical materials; Robustness; Special issues and sections; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2001. Fourteenth International Conference on
Conference_Location
Bangalore
ISSN
1063-9667
Print_ISBN
0-7695-0831-6
Type
conf
DOI
10.1109/ICVD.2001.902701
Filename
902701
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