Title :
Performance optimization of 60 nm channel length vertical MOSFETs using channel engineering
Author :
Mahapatra, Santanu ; Ramgopal Rao, V. ; Vasi, Juzer
Abstract :
A comprehensive study has been performed to optimize the electrical characteristics of delta doped channel MOSFETs (D2FETs) having channel length of 60 nm. Extensive 2D device simulations have been employed to show that D2FETs exhibit higher drain current drive and reduced short channel and hot carrier effects compared to MOSFETs having uniform channel doping. The improvement has been found significant when the delta peak is shifted near the source end of the channel. Device simulations show acceptable short channel effects for 60 nm D2FETs when the gate oxide thickness is reduced to the 2.5-3 nm regime
Keywords :
MOSFET; optimisation; semiconductor device models; 2.5 to 3 nm; 2.5-3 nm regime; 2D device simulation; 60 nm; 60 nm channel length vertical MOSFET; MBE; MOSFET; channel engineering; device simulation; drive currents; gate oxide thickness; hot carrier degradation; optimisation; performance optimization; reduced short channel; Doping profiles; Electric variables; Hot carrier effects; Hot carriers; MOSFETs; Medical simulation; Metallization; Molecular beam epitaxial growth; Optimization; Semiconductor process modeling;
Conference_Titel :
VLSI Design, 2001. Fourteenth International Conference on
Conference_Location :
Bangalore
Print_ISBN :
0-7695-0831-6
DOI :
10.1109/ICVD.2001.902703
