Title :
A 16K × 1b static RAM
Author :
Pashley, R. ; Owen, W. ; Owen, J. ; Shappir, Joseph ; Smith, Ross ; Liu, Siyuan ; Jecmen, R.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
This paper will report on the application of double poly MOS technology to a 5V 16K×1b static RAM. Typical access time and power dissipation is 45ns and 550mW, respectively.
Keywords :
Circuits; Current supplies; Decoding; Paper technology; Pins; Power dissipation; Power supplies; Random access memory; Read-write memory; Temperature dependence;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1156012
