Title :
A 10W X-band pulsed GaAs FET
Author :
Wade, P. ; Drukier, I.
Author_Institution :
Microwave Semiconductor Corp., Somerset, NJ, USA
Abstract :
Increases in GaAS FET X-band power output, possible using pulsed operation at high voltage, will be reported, citing peak power output of more than 10W obtained at 8GHz from a device capable of 5W CW at 6GHz.
Keywords :
Bandwidth; Gallium arsenide; Microwave FETs; Microwave amplifiers; Pulse amplifiers; Pulse measurements; Radio frequency; Space vector pulse width modulation; Temperature distribution; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156021
