• DocumentCode
    2868819
  • Title

    A 10W X-band pulsed GaAs FET

  • Author

    Wade, P. ; Drukier, I.

  • Author_Institution
    Microwave Semiconductor Corp., Somerset, NJ, USA
  • Volume
    XXIII
  • fYear
    1980
  • fDate
    13-15 Feb. 1980
  • Firstpage
    158
  • Lastpage
    159
  • Abstract
    Increases in GaAS FET X-band power output, possible using pulsed operation at high voltage, will be reported, citing peak power output of more than 10W obtained at 8GHz from a device capable of 5W CW at 6GHz.
  • Keywords
    Bandwidth; Gallium arsenide; Microwave FETs; Microwave amplifiers; Pulse amplifiers; Pulse measurements; Radio frequency; Space vector pulse width modulation; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1980.1156021
  • Filename
    1156021
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2868819