• DocumentCode
    2868932
  • Title

    Ultra-wideband medium-power GaAs MESFET amplifiers

  • Author

    Hua Tserng ; Macksey, H.

  • Author_Institution
    Texas Instruments, Inc., Dallas, TX, USA
  • Volume
    XXIII
  • fYear
    1980
  • fDate
    13-15 Feb. 1980
  • Firstpage
    166
  • Lastpage
    167
  • Abstract
    The design and performance of 5-18GHz single and multi-stage GaAs MESFET amplifiers with 1O0-300mW output will be discussed.
  • Keywords
    Broadband amplifiers; FETs; Frequency; Gallium arsenide; Inductors; MESFETs; Power amplifiers; Power generation; Radiofrequency amplifiers; Ultra wideband technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1980.1156027
  • Filename
    1156027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2868932