• DocumentCode
    2868989
  • Title

    A 16Kb electrically erasable nonvolatile memory

  • Author

    Johnson, Wayne ; Perlegos, G. ; Renninger, A. ; Kuhn, G. ; Ranganath, T.

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • Volume
    XXIII
  • fYear
    1980
  • fDate
    13-15 Feb. 1980
  • Firstpage
    152
  • Lastpage
    153
  • Abstract
    A16K(2K×8) bit electrically-erasable nonvolatile memory (E2PROM) employing oxides less than 200 Å thick through which electrons tunnel toward or away from a floating polysilicon gate, will be covered.
  • Keywords
    Charge carrier processes; Dielectrics; EPROM; Electrons; Nonvolatile memory; Proposals; Reproducibility of results; Silicon; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1980.1156030
  • Filename
    1156030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2868989