Title :
A 16Kb electrically erasable nonvolatile memory
Author :
Johnson, Wayne ; Perlegos, G. ; Renninger, A. ; Kuhn, G. ; Ranganath, T.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
A16K(2K×8) bit electrically-erasable nonvolatile memory (E2PROM) employing oxides less than 200 Å thick through which electrons tunnel toward or away from a floating polysilicon gate, will be covered.
Keywords :
Charge carrier processes; Dielectrics; EPROM; Electrons; Nonvolatile memory; Proposals; Reproducibility of results; Silicon; Temperature; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156030
