Title :
A 200ns 150mW 64K HMOS EPROM
Author :
Smith, Samuel ; Yeargain, J.
Author_Institution :
Motorola Inc., Mesa, AZ, USA
Abstract :
An 8K × 8 ultraviolet erasable EPROM fabricated in double poly HMOS technology will be described. Programming is accomplished in a quasi-static manner requiring one TTL level pulse per word.
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156042
