• DocumentCode
    2869225
  • Title

    An 18–32 GHz ultra wideband low-noise amplifier with a low variation of group delay

  • Author

    Seo, Bohee ; Jeon, Sanggeun

  • Author_Institution
    School of Electrical Engineering, Korea University, Seoul 136-713, Korea
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents an 18-to-32-GHz ultra wideband (UWB) low-noise amplifier (LNA) in a bulk 0.13-µm CMOS technology. The LNA consisting of four stages exhibits a flat gain of 14.5 ± 1.5 dB over the entire 18-to-32 GHz and a noise figure of 5.5 ± 0.4 dB at K-band (18 to 26.5 GHz). Moreover, the group delay variation is suppressed as low as 63.5 ± 6.5 ps over 21–26 GHz. The wideband characteristics of gain and group delay are achieved by a slope offset technique. The individual stages are designed, such that the transfer function of each stage shows its peak at different frequencies by adjusting the output resonance network. The pole-zero analysis is performed to validate the slope offset technique and to provide a practical design guideline. Due to the wideband performance of flat gain and group delay, the proposed LNA is suitable for UWB communication or radar applications that demand an instantaneously wide fractional bandwidth.
  • Keywords
    CMOS integrated circuits; CMOS technology; Delay; Gain; Low-noise amplifiers; Ultra wideband technology; Wideband; CMOS; flat group delay; low-noise amplifier; ultra wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259741
  • Filename
    6259741