DocumentCode
2869225
Title
An 18–32 GHz ultra wideband low-noise amplifier with a low variation of group delay
Author
Seo, Bohee ; Jeon, Sanggeun
Author_Institution
School of Electrical Engineering, Korea University, Seoul 136-713, Korea
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
This paper presents an 18-to-32-GHz ultra wideband (UWB) low-noise amplifier (LNA) in a bulk 0.13-µm CMOS technology. The LNA consisting of four stages exhibits a flat gain of 14.5 ± 1.5 dB over the entire 18-to-32 GHz and a noise figure of 5.5 ± 0.4 dB at K-band (18 to 26.5 GHz). Moreover, the group delay variation is suppressed as low as 63.5 ± 6.5 ps over 21–26 GHz. The wideband characteristics of gain and group delay are achieved by a slope offset technique. The individual stages are designed, such that the transfer function of each stage shows its peak at different frequencies by adjusting the output resonance network. The pole-zero analysis is performed to validate the slope offset technique and to provide a practical design guideline. Due to the wideband performance of flat gain and group delay, the proposed LNA is suitable for UWB communication or radar applications that demand an instantaneously wide fractional bandwidth.
Keywords
CMOS integrated circuits; CMOS technology; Delay; Gain; Low-noise amplifiers; Ultra wideband technology; Wideband; CMOS; flat group delay; low-noise amplifier; ultra wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259741
Filename
6259741
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