Title :
Thermal nitride gate FET technology for VLSI devices
Author :
Ito, Takao ; Nozaki, Takayuki ; Ishikawa, Hiroshi ; Fukukawa, Y.
Author_Institution :
Fujitsu Laboratories, Ltd., Kawasaki, Japan
Abstract :
The use of thermally-grown silicon nitride films with a nominal thickness of 70Å as a gate insulator for submicron-channel IGFETs will be covered. The approach afforded high transconductance and elimination of short-channel effects.
Keywords :
EPROM; FETs; Indium tin oxide; Logic design; Logic devices; Propagation delay; Semiconductor films; Silicon; Stress; Very large scale integration;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156059
