DocumentCode
2869468
Title
Thermal nitride gate FET technology for VLSI devices
Author
Ito, Takao ; Nozaki, Takayuki ; Ishikawa, Hiroshi ; Fukukawa, Y.
Author_Institution
Fujitsu Laboratories, Ltd., Kawasaki, Japan
Volume
XXIII
fYear
1980
fDate
13-15 Feb. 1980
Firstpage
74
Lastpage
75
Abstract
The use of thermally-grown silicon nitride films with a nominal thickness of 70Å as a gate insulator for submicron-channel IGFETs will be covered. The approach afforded high transconductance and elimination of short-channel effects.
Keywords
EPROM; FETs; Indium tin oxide; Logic design; Logic devices; Propagation delay; Semiconductor films; Silicon; Stress; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1980.1156059
Filename
1156059
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