Title :
Multi-level logic gate implementation in GaAs ICs using schottky diode-FET logic
Author :
Eden, R. ; Lee, Fred ; Long, Shipeng ; Welch, Benjamin ; Zucca, R.
Author_Institution :
Rockwell International, Thousand Oaks, CA, USA
Abstract :
An extension of the Schottky diode-FET logic circuit approach for ultra high-speed, low-power planar GaAs digital ICs to configurations allowing up to three levels of logic to be performed in one gate, will be reported.
Keywords :
Delay effects; FETs; Frequency conversion; Gallium arsenide; Logic circuits; Logic functions; Logic gates; MESFETs; Propagation delay; Schottky diodes;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156064
