DocumentCode
2869716
Title
OpticalWaveguides in Sn2 P2 S6 by low fluence MeV He+ ion implantation
Author
Guarino, Andrea ; Jazbin, Mojca ; Herzog, Christian ; Günter, Peter
Author_Institution
Nonlinear Opt. Lab., ETH Zurich, Zurich
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Optical waveguides in nonlinear crystals of Sn2P2S6 have been produced by He+ ion implantation. Best results are obtained with a fluence about Phi = 0.5 middot 1015 ions/cm2 and for hybrid n1-mode. The depth of the induced optical barrier is Deltan1 = -0.07 at lambda = 0.633mum.
Keywords
crystals; ion implantation; optical materials; optical waveguides; phosphorus compounds; tin compounds; Sn2P2S6; ion implantation; optical barrier; optical waveguides; Ferroelectric materials; Frequency conversion; Ion implantation; Nonlinear optics; Optical refraction; Optical waveguides; Particle beam optics; Planar waveguides; Refractive index; Tin; (160.2100) Electro-optical materials; (230.7390) Waveguides, planar; (260.1180) Anisotropic media;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628141
Filename
4628141
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