DocumentCode
2869774
Title
64K dynamic 1/N fractional device bipolar memory
Author
Selleck, J. ; Kenyon, R. ; Gaffney, D. ; Wiedman, F. ; Bhattacharyya, A. ; Mollier, P.
Author_Institution
IBM Corp., Essex Junction, VT, USA
Volume
XXIII
fYear
1980
fDate
13-15 Feb. 1980
Firstpage
220
Lastpage
221
Abstract
This report will cover a 1/N fractional device bipolar memory cell - the FET one-device memory cell equivalent - noting that by reversing the orientation of the transistor and capacitor, the density, thin dielectric and polysilicon techniques of FET technology can be combined with the speed of bipolar technology,
Keywords
Capacitors; Dielectric devices; FETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1980.1156079
Filename
1156079
Link To Document