Title :
64K dynamic 1/N fractional device bipolar memory
Author :
Selleck, J. ; Kenyon, R. ; Gaffney, D. ; Wiedman, F. ; Bhattacharyya, A. ; Mollier, P.
Author_Institution :
IBM Corp., Essex Junction, VT, USA
Abstract :
This report will cover a 1/N fractional device bipolar memory cell - the FET one-device memory cell equivalent - noting that by reversing the orientation of the transistor and capacitor, the density, thin dielectric and polysilicon techniques of FET technology can be combined with the speed of bipolar technology,
Keywords :
Capacitors; Dielectric devices; FETs;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156079
