DocumentCode
2869943
Title
Development of high power RF MEMS switches
Author
Hong, J.S. ; Tan, S.G. ; Cui, Z. ; Wang, L. ; Greed, R.B. ; Voyce, D.C.
Author_Institution
Dept. of Electr., Electron. & Comput. Eng., Heriot-Watt Univ., Edinburgh, UK
fYear
2004
fDate
18-21 Aug. 2004
Abstract
This paper reports on recent developments of high power RF MEMS switch. An approach using a matrix of switching elements for the development is introduced. The design and modelling of a 2 × 2 RF MEMS switch matrix of this type is described. The fabrication processes are presented.
Keywords
microswitches; microwave switches; fabrication processes; high power RF MEMS switches; switching elements matrix; Bridge circuits; Communication switching; Electrodes; Insertion loss; Microwave devices; Power engineering and energy; Power engineering computing; Radio frequency; Radiofrequency microelectromechanical systems; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2004. ICMMT 4th International Conference on, Proceedings
Print_ISBN
0-7803-8401-6
Type
conf
DOI
10.1109/ICMMT.2004.1411437
Filename
1411437
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